vs-mbrs140-m3 www.vishay.com vishay semiconductors revision: 26-aug-14 1 document number: 95747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high performance schottky rectifier, 1.0 a features ? small foot print, surface mountable ? low forward voltage drop ? high frequency operation ? guard ring for enhanced ruggedness and long term reliability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 description the vs-mbrs140-m3 surface mount schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on pc boards. typical applications are in disk drive s, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. ? product summary package smb i f(av) 1.0 a v r 40 v v f at i f 0.53 v i rm max. 4.0 ma at 125 c t j max. 125 c diode variation single die e as 3.0 mj cathode anode s mb major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 1.0 a v rrm 40 v i fsm t p = 5 s sine 380 a v f 1.0 a pk , t j = 125 c 0.53 v t j range -55 to +150 c voltage ratings parameter symbol vs-mbrs140-m3 units maximum dc reverse voltage v r 40 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t l = 119 c, rectangular waveform 1.0 a maximum peak one cycle ? non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 380 10 ms sine or 6 ms rect. pulse 40 non-repetitive avalanche energy e as t j = 25 c, i as = 1 a, l = 6 mh 3.0 mj repetitive avalanche current i ar current decaying linearly to zero in 1 s ? frequency limited by t j maximum v a = 1.5 x v r typical 1.0 a
vs-mbrs140-m3 www.vishay.com vishay semiconductors revision: 26-aug-14 2 document number: 95747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % notes (1) thermal runaway condition fo r a diode on its own heatsink (2) mounted 1" square pcb electrical specifications parameter symbol test conditions typ. max. units maximum forward voltage drop v fm (1) 1 a t j = 25 c 0.52 0.6 v 2 a 0.70 0.77 1 a t j = 125 c 0.48 0.53 2 a 0.63 0.71 maximum reverse leakage current i rm (1) t j = 25 c v r = rated v r -0.1 ma t j = 125 c - 4.0 maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c - 80 pf typical series inductance l s measured lead to lead 5 mm from package body - 2.0 nh maximum voltage rate of change dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage ? temperature range t j (1) , t stg -55 to +150 c maximum thermal resistance, ? junction to lead r thjl (2) dc operation ? see fig. 4 36 c/w maximum thermal resistance, ? junction to ambient r thja dc operation 80 approximate weight 0.10 g 0.003 oz. marking device case style smb (similar to do-214aa) 14 dp tot dt j ------------- 1 r thja -------------- <
vs-mbrs140-m3 www.vishay.com vishay semiconductors revision: 26-aug-14 3 document number: 95747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical peak reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (per leg) 0.1 1.0 10 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.4 0.6 0.8 1.0 1.2 0.2 t j = 150 c t j = 125 c t j = 25 c 0.0001 0.1 1.0 0.01 0.001 10 i r - reverse current (ma) v r - reverse voltage (v) 10 51520 40 25 30 35 0 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 10 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 10 20 40 30 0 t j = 25 c 0.1 1 100 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 10 d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 . single pulse (thermal resistance) p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 100
vs-mbrs140-m3 www.vishay.com vishay semiconductors revision: 26-aug-14 4 document number: 95747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum average forward current vs. allowable lead temperature fig. 6 - maximum average forward dissipation vs. average forward current fig. 7 - maximum peak surge forward current vs. pulse duration note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; ? pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); ? pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 70 80 100 110 120 130 150 160 140 allowable case temperature (c) i f(av) - average forward current (a) 0.4 0.2 0.6 0.8 1.0 1.2 1.4 1.6 0 90 dc see note (1) d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 square wave (d = 0.50) rated v r applied 0 0.4 0.8 0.6 0.2 1.0 average power loss (w) i f(av) - average forward current (a) 0.3 0.6 1.5 0.9 1.2 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 10 100 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge
vs-mbrs140-m3 www.vishay.com vishay semiconductors revision: 26-aug-14 5 document number: 95747 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n preferred package code minimum order quantity packaging description vs-mbrs140-m3/5bt 5bt 3200 13" diam eter plastic tape and reel links to related documents dimensions www.vishay.com/doc?95401 part marking information www.vishay.com/doc?95403 packaging information www.vishay.com/doc?95404 spice model www.vishay.com/doc?95299 2 - schottky mbr series 3 - s = smb 4 - current rating (1 = 1 a) 5 - voltage rating (40 = 40 v) 6 - -m3 = halogen-free, rohs-compliant, and termination lead (pb)-free device code 5 1 3 2 4 6 vs- mbr s 1 40 -m3 1 - vishay semiconductors products
document number: 95401 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 09-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 smb outline dimensions vishay semiconductors dimensions in inches (millimeters) cathode band do-214aa ( s mb) 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.096 (2.44) 0.084 (2.13) mounting pad layout 0.086 (2.18) min. 0.060 (1.52) min. 0.085 (2.159) max. 0.220 (5.59) ref.
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